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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology CT16G4S24AM.M16FB 16GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Crucial Technology CT16G4S24AM.M16FB 16GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Crucial Technology CT16G4S24AM.M16FB 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更快的读取速度,GB/s
16.8
16.7
测试中的平均数值
更快的写入速度,GB/s
13.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
16.7
16.8
写入速度,GB/s
11.8
13.3
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2756
3009
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Crucial Technology CT16G4S24AM.M16FB 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology VDQVE1B16 2GB
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Samsung M391B5673EH1-CH9 2GB
Kingston XVTW4H-MIE 32GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3000C16-16GISB 16GB
Kingston 99U5403-036.A00G 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8266 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Crucial Technology CT25664BA160B.C16F 2GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
报告一个错误
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Bug description
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