Kingston ACR512X64D3S13C9G 4GB vs Super Talent F3200UA8G 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Super Talent F3200UA8G 8GB

Super Talent F3200UA8G 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 53% 更低的延时

Super Talent F3200UA8G 8GB

需要考虑的原因
Super Talent F3200UA8G 8GB

报告一个错误

更快的读取速度，GB/s

18.9 11.5

测试中的平均数值
更快的写入速度，GB/s

9.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Super Talent F3200UA8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 58
读取速度，GB/s

11.5 18.9
写入速度，GB/s

8.5 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 2250

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 3600 C14 Series 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Qimonda 64T128020EDL2.5C2 1GB

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InnoDisk Corporation M4S0-8GSSOCRG 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3333C16-8GVK 8GB

Samsung M471B5273EB0-CK0 4GB

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G Skill Intl F4-2666C19-8GIS 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F4-2666C15-4GRR 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB