RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-8GTZ 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
G Skill Intl F4-3466C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 27
    左右 -35% 更低的延时
  • 更快的读取速度，GB/s
    19.2 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 20
  • 读取速度，GB/s
    16.7 left arrow 19.2
  • 写入速度，GB/s
    11.8 left arrow 15.3
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3429

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3466C16-8GTZ 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
内存RAM
Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173BH0-YK0 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2800C15-8GVSB 8GB
G Skill Intl F4-2800C15-8GVSB 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM