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Samsung M378B5773DH0-CH9 2GB
Transcend Information TS2GSH64V1B 16GB
比较
Samsung M378B5773DH0-CH9 2GB vs Transcend Information TS2GSH64V1B 16GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Transcend Information TS2GSH64V1B 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Transcend Information TS2GSH64V1B 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的读取速度,GB/s
12
11.7
测试中的平均数值
更快的写入速度,GB/s
8.3
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Transcend Information TS2GSH64V1B 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
11.7
12.0
写入速度,GB/s
7.2
8.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1749
2034
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Transcend Information TS2GSH64V1B 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMD64GX4M4A2400C14 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT32GX4M4C3200C14 8GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9965662-013.A01G 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston 9905702-184.A00G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix GKE160SO102408-3000 16GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX2666C13/16GX 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X16GE2400Z16K4 16GB
Strontium EVMT8G1600U86S 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
报告一个错误
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Bug description
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