Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3600C19-16GSXW 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-3600C19-16GSXW 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GSXW 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

17.8 16.7

测试中的平均数值
更快的写入速度，GB/s

12.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

16.7 17.8
写入速度，GB/s

11.8 12.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3091

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMD32GX4M4B3333C16 8GB

Corsair CMD32GX4M4B3333C16 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Kingmax Semiconductor GLLH22F-18---------- 16GB

Kingmax Semiconductor GLLH22F-18---------- 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB