Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时

Micron Technology 16ATF4G64HZ-3G2E1 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB

报告一个错误

更快的读取速度，GB/s

16.4 13.5

测试中的平均数值
更快的写入速度，GB/s

13.7 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

13.5 16.4
写入速度，GB/s

9.3 13.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2278 3206

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology B|B8G4D30BET4K.C8FD 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB