Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-4400C19-8GTZSW 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-4400C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4400C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

16 27

左右 -69% 更低的延时
更快的读取速度，GB/s

22.1 16.7

测试中的平均数值
更快的写入速度，GB/s

18.6 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4400C19-8GTZSW 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 16
读取速度，GB/s

16.7 22.1
写入速度，GB/s

11.8 18.6
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3906

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G43DB0-CPB 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

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SK Hynix HMA81GU6DJR8N-XN 8GB

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Patriot Memory (PDP Systems) 2800 C18 Series 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-3333C16-16GTZB 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M471A1G43DB0-0-B 8GB

Samsung M471A1G43DB0-0-B 8GB