Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Golden Empire CL19-25-25 D4-4000 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Golden Empire CL19-25-25 D4-4000 4GB

需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

17.5 16.7

测试中的平均数值
更快的写入速度，GB/s

12.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL19-25-25 D4-4000 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

16.7 17.5
写入速度，GB/s

11.8 12.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL19-25-25 D4-4000 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

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Kingston 99U5474-010.A00LF 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB