Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston KHX3466C16D4/8GX 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Kingston KHX3466C16D4/8GX 8GB

Kingston KHX3466C16D4/8GX 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Kingston KHX3466C16D4/8GX 8GB

需要考虑的原因
Kingston KHX3466C16D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

16.8 16.7

测试中的平均数值
更快的写入速度，GB/s

16.0 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KHX3466C16D4/8GX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

16.7 16.8
写入速度，GB/s

11.8 16.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 3573

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-2400C15-8GTZRX 8GB

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A-DATA Technology DQVE1908 512MB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M393A2G40DB1-CRC 16GB

Samsung M393A2G40DB1-CRC 16GB