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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KTD3KX-MIB 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Kingston KTD3KX-MIB 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Kingston KTD3KX-MIB 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
更快的读取速度,GB/s
16.7
13
测试中的平均数值
更快的写入速度,GB/s
11.8
6.9
测试中的平均数值
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
Kingston KTD3KX-MIB 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
27
左右 -4% 更低的延时
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KTD3KX-MIB 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
26
读取速度,GB/s
16.7
13.0
写入速度,GB/s
11.8
6.9
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2756
1931
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Kingston KTD3KX-MIB 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4A2400C16 8GB
Crucial Technology CT51264BF160B.M16F 4GB
Samsung SF4721G4CKHH6DFSDS 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KTD3KX-MIB 8GB
Team Group Inc. ZEUS-2133 8GB
Corsair CMWX16GC3200C16W2E 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avant Technology W641GU48J5213ND 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Swissbit MEU25664D6BC2EP-30 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Samsung M471A2G43AB2-CWE 16GB
Kingston KVR26N19D8/16 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KF2666C16S4/16G 16GB
Samsung 1600 CL10 Series 8GB
Apacer Technology GD2.1831WS.001 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905734-018.A00G 16GB
报告一个错误
×
Bug description
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