RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZR 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C16-8GTZR 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3600C16-8GTZR 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
28
左右 14% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C16-8GTZR 8GB
报告一个错误
更快的读取速度,GB/s
19.1
16
测试中的平均数值
更快的写入速度,GB/s
16.9
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZR 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
28
读取速度,GB/s
16.0
19.1
写入速度,GB/s
12.5
16.9
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3859
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C16-8GTZR 8GB RAM的比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMD32GX4M4B2133C10 8GB
Kingston HP669238-071-HYC 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK64GX4M4C3000C16 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CMSX32GX4M2A3000C16 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Smart Modular SF464128CK8I6GKSEG 4GB
Kingston 9905403-515.A00LF 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Kingston ACR256X64D3S1333C9 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-16GVK 16GB
Kingston 9965662-016.A00G 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Samsung M378A5244CB0-CTD 4GB
报告一个错误
×
Bug description
Source link