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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD48G32Q3 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Maxsun MSD48G32Q3 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 94
    左右 71% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 11.3
    测试中的平均数值
Maxsun MSD48G32Q3 8GB 需要考虑的原因
Maxsun MSD48G32Q3 8GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Maxsun MSD48G32Q3 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 94
  • 读取速度，GB/s
    16.7 left arrow 13.5
  • 写入速度，GB/s
    11.8 left arrow 11.3
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2771

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Maxsun MSD48G32Q3 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston KHX3733C19D4/8GX 8GB
Kingston KHX3733C19D4/8GX 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M391A1G43EB1-CRC 8GB
Samsung M391A1G43EB1-CRC 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9905624-014.A00G 4GB
Kingston 9905624-014.A00G 4GB
内存RAM