Crucial Technology CT51264BA1339.C16F 4GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 53% 更低的延时

Samsung V-GeN D4S4GL32A8TL 4GB

需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB

报告一个错误

更快的读取速度，GB/s

18.5 13.9

测试中的平均数值
更快的写入速度，GB/s

9.5 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 58
读取速度，GB/s

13.9 18.5
写入速度，GB/s

8.4 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 1998

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Golden Empire CL14-16-16 D4-2400 16GB