Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时
更快的读取速度，GB/s

16.7 15.4

测试中的平均数值

Micron Technology 16ATF2G64HZ-3G2J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2J1 16GB

报告一个错误

更快的写入速度，GB/s

12.4 11.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

16.7 15.4
写入速度，GB/s

11.8 12.4
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2756 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Patriot Memory (PDP Systems) PSD416G26662 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMW64GX4M8A2666C16 8GB

Corsair CMW64GX4M8A2666C16 8GB