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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1K43DB1-CWE 8GB
比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M471A1K43DB1-CWE 8GB
总分
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
总分
Samsung M471A1K43DB1-CWE 8GB
差异
规格
评论
差异
需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
33
左右 18% 更低的延时
更快的读取速度,GB/s
16.7
16.1
测试中的平均数值
需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
更快的写入速度,GB/s
13.0
11.8
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2 更高的带宽
规格
完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1K43DB1-CWE 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
27
33
读取速度,GB/s
16.7
16.1
写入速度,GB/s
11.8
13.0
内存带宽,mbps
21300
25600
Other
描述
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2756
2987
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Samsung M471A1K43DB1-CWE 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9932301-P01.A00G 4GB
Samsung M393B1G70BH0-YK0 8GB
Golden Empire CL16-16-16 D4-2800 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston MSI24D4S7S8MB-8 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
Kingston 99U5474-037.A00LF 4GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Samsung M378B5773DH0-CH9 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston KHX2933C17D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin 99[2/7/4]202F 4GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STK2400C15-16GB 16GB
报告一个错误
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Bug description
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