Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

17.2 16.7

测试中的平均数值
更快的写入速度，GB/s

13.0 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

16.7 17.2
写入速度，GB/s

11.8 13.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 3004

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M2A2133C13 16GB

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Corsair CML8GX3M2A1600C9 4GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB

Crucial Technology BL16G36C16U4W.M16FE1 16GB