Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA41GR7BJR4N-UH 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时
更快的读取速度，GB/s

16.7 12.5

测试中的平均数值
更快的写入速度，GB/s

11.8 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

SK Hynix HMA41GR7BJR4N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7BJR4N-UH 8GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA41GR7BJR4N-UH 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

16.7 12.5
写入速度，GB/s

11.8 9.7
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2609

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

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Samsung M378A1K43DB2-CTD 8GB

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Samsung V-GeN D4S8GL30A8TX5 8GB

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Corsair CMU32GX4M2C3200C16 16GB

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Kingston 99U5403-050.A00LF 4GB

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Essencore Limited KD4AGU880-34A170X 16GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMR32GX4M2F3600C18 16GB

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Samsung M471B5273CH0-CH9 4GB

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Transcend Information JM3200HLB-16GK 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston KHX2133C14D4/8G 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Crucial Technology CT4G4DFS8213.8FA11?? 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB