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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA82GU6MFR8N-TF 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 34
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
SK Hynix HMA82GU6MFR8N-TF 16GB 需要考虑的原因
SK Hynix HMA82GU6MFR8N-TF 16GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 34
  • 读取速度，GB/s
    16.7 left arrow 13.9
  • 写入速度，GB/s
    11.8 left arrow 8.5
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2504

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

SK Hynix HMA82GU6MFR8N-TF 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
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Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
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Kingston 9905678-110.A00G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
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Corsair CMD16GX3M2A1866C9 8GB
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Avant Technology J642GU42J7240NF 16GB
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Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
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Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
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V-Color Technology Inc. TA48G30S815G 8GB
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Kingston X5H5PW-MIB 8GB
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SK Hynix HMT451S6BFR8A-PB 4GB
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Kingston KHX3600C18D4/32GX 32GB
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AMD R5S38G1601U2S 8GB
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SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Apacer Technology 78.C2GFA.AF30B 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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