Crucial Technology CT51264BD1339.M16F 4GB vs Mushkin 99[2/7/4]192[F/T] 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 62% 更低的延时
更快的写入速度，GB/s

8.6 8.5

测试中的平均数值

Mushkin 99[2/7/4]192[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]192[F/T] 4GB

报告一个错误

更快的读取速度，GB/s

15.8 12.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 65
读取速度，GB/s

12.1 15.8
写入速度，GB/s

8.6 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 1932

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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AMD AE34G1601U1 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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G Skill Intl F4-4400C19-16GTZR 16GB

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Samsung M471A2K43DB1-CTD 16GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Kingston 9905625-097.A00G 16GB

Kingston 9905625-097.A00G 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Corsair CMT16GX4M2C3200C14 8GB

Corsair CMT16GX4M2C3200C14 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB