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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Crucial Technology BLS8G4D240FSB.M16FAD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
总分
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
35
左右 -35% 更低的延时
更快的读取速度,GB/s
14.1
9.8
测试中的平均数值
更快的写入速度,GB/s
11.1
7.9
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
35
26
读取速度,GB/s
9.8
14.1
写入速度,GB/s
7.9
11.1
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2126
2646
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
Asgard VMA45UH-MEC1U2AW2 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston XW21KG-MIE-NX 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
AMD R7416G2400U2S 16GB
Kingston 9965525-058.A00LF 8GB
G Skill Intl F4-2666C18-32GTZN 32GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston KMKYF9-MIB 8GB
Avant Technology F641GU67F9333G 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Corsair CM2X1024-8500C5D 1GB
Samsung M378A1K43CB2-CTD 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Kingston 9905403-156.A00LF 2GB
Samsung M393B1K70EB0-CH9 8GB
A-DATA Technology AD73I1B1672EG 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Samsung DDR3 8GB 1600MHz 8GB
Panram International Corporation W4N2666PS-8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.1527WH.002 8GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-2800C15-4GVR 4GB
报告一个错误
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