Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Crucial Technology BLS8G4D240FSB.M16FAD 8GB

总分
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分
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Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

差异

  • 低于PassMark测试中的延时,ns
    26 left arrow 35
    左右 -35% 更低的延时
  • 更快的读取速度,GB/s
    14.1 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    11.1 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    35 left arrow 26
  • 读取速度,GB/s
    9.8 left arrow 14.1
  • 写入速度,GB/s
    7.9 left arrow 11.1
  • 内存带宽,mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2126 left arrow 2646
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