Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA304G08-EDJ1B 4GB

总分

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分

ASint Technology SLA304G08-EDJ1B 4GB

ASint Technology SLA304G08-EDJ1B 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB

报告一个错误

更快的写入速度，GB/s

9.0 7.7

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

ASint Technology SLA304G08-EDJ1B 4GB

需要考虑的原因
ASint Technology SLA304G08-EDJ1B 4GB

报告一个错误

更快的读取速度，GB/s

13.8 12.9

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G6M1 4GB

ASint Technology SLA304G08-EDJ1B 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 28
读取速度，GB/s

12.9 13.8
写入速度，GB/s

9.0 7.7
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2112 2350

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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