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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Crucial Technology CT16G4SFRA32A.M16FR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
总分
Crucial Technology CT16G4SFRA32A.M16FR 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
42
左右 17% 更低的延时
需要考虑的原因
Crucial Technology CT16G4SFRA32A.M16FR 16GB
报告一个错误
更快的读取速度,GB/s
15.9
9.8
测试中的平均数值
更快的写入速度,GB/s
13.7
7.9
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
35
42
读取速度,GB/s
9.8
15.9
写入速度,GB/s
7.9
13.7
内存带宽,mbps
17000
25600
Other
描述
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2126
2885
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4266C16 8GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT16G4DFD824A.M16FB 16GB
报告一个错误
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