Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Crucial Technology CT4G4DFS8213.C8FBD1 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FBD1 4GB

Crucial Technology CT4G4DFS8213.C8FBD1 4GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度,GB/s
    15.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    11.1 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    35 left arrow 24
  • 读取速度,GB/s
    9.8 left arrow 15.5
  • 写入速度,GB/s
    7.9 left arrow 11.1
  • 内存带宽,mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2126 left arrow 2484
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