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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Micron Technology 8ATF1G64HZ-2G6H1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Micron Technology 8ATF1G64HZ-2G6H1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
37
左右 8% 更低的延时
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6H1 8GB
报告一个错误
更快的读取速度,GB/s
14
8.6
测试中的平均数值
更快的写入速度,GB/s
9.7
5.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
37
读取速度,GB/s
8.6
14.0
写入速度,GB/s
5.8
9.7
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1682
2277
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378A1K43EB2-CWE 8GB
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Team Group Inc. TEAMGROUP-UD3-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston KH280C14D4/8X 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
SK Hynix 8GB
G Skill Intl F4-3200C16-32GTRG 32GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Corsair CM2X1024-8500C5D 1GB
Samsung M378A1K43BB2-CRC 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLB-16G 16GB
A-DATA Technology DDR4 2133 2OZ 8GB
Samsung M378A1G44AB0-CWE 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
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