Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 11% 更低的延时

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

报告一个错误

更快的写入速度，GB/s

7.7 5.8

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

34 38
读取速度，GB/s

8.6 8.6
写入速度，GB/s

5.8 7.7
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1682 1949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Crucial Technology BL16G32C16U4B.16FE 16GB

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