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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMK16GX4M2B2800C14 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair CMK16GX4M2B2800C14 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Corsair CMK16GX4M2B2800C14 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
Corsair CMK16GX4M2B2800C14 8GB
报告一个错误
更快的读取速度,GB/s
18.4
12.4
测试中的平均数值
更快的写入速度,GB/s
11.7
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMK16GX4M2B2800C14 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
12.4
18.4
写入速度,GB/s
9.6
11.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
3030
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Corsair CMK16GX4M2B2800C14 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMH16GX4M2Z3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK16GX4M2B2800C14 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
SK Hynix HMT451U7BFR8C-RD 4GB
Kingston KF3200C16D4/32GX 32GB
SpecTek Incorporated PSD34G13332 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-8GTZN 8GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Kingston KVR16N11/8-SP 8GB
Kingston HP32D4U2S1ME-8 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
SK Hynix DDR2 800 2G 2GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston XRGM6C-MIB 16GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology BL8G30C15U4WL.M8FE1 8GB
Samsung M471B5273DH0-CK0 4GB
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
报告一个错误
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Bug description
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