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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMK16GX4M2K4400C19 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair CMK16GX4M2K4400C19 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Corsair CMK16GX4M2K4400C19 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
需要考虑的原因
Corsair CMK16GX4M2K4400C19 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
28
左右 -22% 更低的延时
更快的读取速度,GB/s
19.4
12.4
测试中的平均数值
更快的写入速度,GB/s
17.6
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMK16GX4M2K4400C19 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
23
读取速度,GB/s
12.4
19.4
写入速度,GB/s
9.6
17.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
4181
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Corsair CMK16GX4M2K4400C19 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK16GX4M2K4400C19 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Samsung M393B1K70CH0-YH9 8GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK16GX4M1A2666C16 16GB
SK Hynix HMT451S6AFR8A-PB 4GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT51264AC800.C16FC 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
Samsung M393B1K70QB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology F6451U64F9333G 4GB
Kingston KHX2666C16D4/32GX 32GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Transcend Information TS512MSH64V4H 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
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