RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
报告一个错误
更快的读取速度,GB/s
16.2
12.4
测试中的平均数值
更快的写入速度,GB/s
12.4
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
28
读取速度,GB/s
12.4
16.2
写入速度,GB/s
9.6
12.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
3305
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905598-040.A00G 16GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-2666C19-8GIS 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2800C16-8GRK 8GB
Kingston HP698651-154-MCN 8GB
Samsung M471A5143EB1-CRC 4GB
Samsung M393B1K70QB0-CK0 8GB
Kingston X74R9W-MIE 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMU16GX4M2A2666C16 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Corsair CMY8GX3M2A2666C10 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G6D1 8GB
报告一个错误
×
Bug description
Source link