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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-4000C18-16GVK 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-4000C18-16GVK 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
G Skill Intl F4-4000C18-16GVK 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4000C18-16GVK 16GB
报告一个错误
更快的读取速度,GB/s
18.5
12.4
测试中的平均数值
更快的写入速度,GB/s
15.6
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-4000C18-16GVK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
28
读取速度,GB/s
12.4
18.5
写入速度,GB/s
9.6
15.6
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2329
3704
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-4000C18-16GVK 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Kingston 99U5474-038.A00LF 4GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology 78.D2GF2.AU30B 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M471A5143DB0-CPB 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4B8G1L2666A18S4 8GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3466C16-8GVR 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Crucial Technology 8G4US2400.M8B1 8GB
Kingston 9905700-047.A00G 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Samsung M3 78T2953EZ3-CF7 1GB
DSL Memory D4SH1G081SH26A-C 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8G2666CL19 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
报告一个错误
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Bug description
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