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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Micron Technology 16ATF2G64AZ-2G6E1 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
38
左右 26% 更低的延时
需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB
报告一个错误
更快的读取速度,GB/s
15
12.4
测试中的平均数值
更快的写入速度,GB/s
12.5
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
38
读取速度,GB/s
12.4
15.0
写入速度,GB/s
9.6
12.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2329
3005
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB RAM的比较
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965525-144.A00LF 8GB
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Corsair CMK16GX4M2A2133C13 8GB
Avant Technology F641GU67F9333G 8GB
Kingston 9965643-006.A01G 8GB
报告一个错误
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