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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
31
左右 10% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
报告一个错误
更快的读取速度,GB/s
16.8
12.4
测试中的平均数值
更快的写入速度,GB/s
11.7
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
31
读取速度,GB/s
12.4
16.8
写入速度,GB/s
9.6
11.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
3154
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
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Kingston 9905702-014.A00G 8GB
PNY Electronics PNY 2GB
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Kingston 9905403-444.A00LF 4GB
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Samsung 1600 CL10 Series 8GB
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Apacer Technology 78.D2GG7.AU30B 16GB
报告一个错误
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