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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Kingston CBD26D4S9S8ME-8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Kingston CBD26D4S9S8ME-8 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分
star star star star star
Kingston CBD26D4S9S8ME-8 8GB

Kingston CBD26D4S9S8ME-8 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 32
    左右 9% 更低的延时
Kingston CBD26D4S9S8ME-8 8GB 需要考虑的原因
Kingston CBD26D4S9S8ME-8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Kingston CBD26D4S9S8ME-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 32
  • 读取速度，GB/s
    12.1 left arrow 16.6
  • 写入速度，GB/s
    7.8 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2177 left arrow 3049

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较

G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB

Kingston CBD26D4S9S8ME-8 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston CBD26D4S9S8ME-8 8GB
Kingston CBD26D4S9S8ME-8 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Avant Technology J642GU42J7240N2 16GB
Avant Technology J642GU42J7240N2 16GB
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Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Kingston XF875V-HYA 8GB
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Corsair CMW64GX4M4K3600C18 16GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Essencore Limited KD4AGU880-36A180X 16GB
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Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Golden Empire CL19-25-25 D4-4000 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Hewlett-Packard 7EH55AA# 8GB
Hewlett-Packard 7EH55AA# 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905643-009.A00G 8GB
Kingston 9905643-009.A00G 8GB
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