Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Samsung M378A5244CB0-CRC 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时

Samsung M378A5244CB0-CRC 4GB

需要考虑的原因
Samsung M378A5244CB0-CRC 4GB

报告一个错误

更快的读取速度，GB/s

15 12.1

测试中的平均数值
更快的写入速度，GB/s

10.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Samsung M378A5244CB0-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

12.1 15.0
写入速度，GB/s

7.8 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2177 2247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4B3600C18 4GB

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G Skill Intl F4-3600C14-16GTRG 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Team Group Inc. Team-Elite-1333 4GB

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AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Crucial Technology CB16GS2400.C16J 16GB

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A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB