RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Samsung M474A1G43EB1-CRC 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Samsung M474A1G43EB1-CRC 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
Samsung M474A1G43EB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
29
左右 -32% 更低的延时
更快的读取速度,GB/s
17.2
12.1
测试中的平均数值
更快的写入速度,GB/s
13.8
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Samsung M474A1G43EB1-CRC 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
22
读取速度,GB/s
12.1
17.2
写入速度,GB/s
7.8
13.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2177
2989
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Samsung M474A1G43EB1-CRC 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-038.A00LF 4GB
Corsair CMK64GX4M8A2400C14 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-2933C14-16GFX 16GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-2133C15-8GNT 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4266C16-8GTZR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M4B3300C16 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMH32GX4M2Z3600C18 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-4266C17-8GTZR 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905625-075.A00G 16GB
Kingston 99U5403-465.A00LF 8GB
Mushkin MR[A/B]4U320LLLM8G 8GB
报告一个错误
×
Bug description
Source link