Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs A-DATA Technology DDR4 3000 2OZ 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 32

左右 9% 更低的延时

A-DATA Technology DDR4 3000 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 3000 2OZ 8GB

报告一个错误

更快的读取速度，GB/s

16.9 13.4

测试中的平均数值
更快的写入速度，GB/s

13.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 32
读取速度，GB/s

13.4 16.9
写入速度，GB/s

9.0 13.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 3196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

KingSpec KingSpec 16GB

KingSpec KingSpec 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB