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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
29
左右 -26% 更低的延时
更快的读取速度,GB/s
16.7
13.4
测试中的平均数值
更快的写入速度,GB/s
13.2
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
23
读取速度,GB/s
13.4
16.7
写入速度,GB/s
9.0
13.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
3025
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM的比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston MSI24D4S7S8MH-8 8GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
AMD AE34G1601U1 4GB
Transcend Information TS2GSH64V6B 16GB
Samsung M393B5270CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Apacer Technology 78.01G86.9H50C 1GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
G Skill Intl F5-6000J3636F16G 16GB
Asgard VMA44UI-MEC1U2AW2 32GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9965600-027.A00G 16GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK16GX4M1Z3600C18 16GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43BB1-CRC 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
报告一个错误
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Bug description
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