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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMT16GX4M2C3200C14 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Corsair CMT16GX4M2C3200C14 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Corsair CMT16GX4M2C3200C14 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 17% 更低的延时
需要考虑的原因
Corsair CMT16GX4M2C3200C14 8GB
报告一个错误
更快的读取速度,GB/s
17
13.4
测试中的平均数值
更快的写入速度,GB/s
11.5
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Corsair CMT16GX4M2C3200C14 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
35
读取速度,GB/s
13.4
17.0
写入速度,GB/s
9.0
11.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
2699
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMT16GX4M2C3200C14 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5403-036.A00G 4GB
Essencore Limited KD48GU880-32A160T 8GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMH32GX4M2D3600C18 16GB
Kingston 99U5584-004.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
AMD R534G1601U1S-UO 4GB
Samsung M391A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M391A1K43BB1-CRC 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kllisre M378A5143EB2-CRC 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX2666C13/16GX 16GB
Kingston ACR512X64D3S13C9G 4GB
Kingston HP32D4S2S1ME-8 8GB
Samsung M378B5173EB0-CK0 4GB
G Skill Intl F4-2800C16-8GVG 8GB
报告一个错误
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Bug description
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