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Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 51
    左右 43% 更低的延时
Micron Technology 9ASF51272PZ-2G1B1 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1B1 4GB
报告一个错误
  • 更快的读取速度，GB/s
    9.6 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 51
  • 读取速度，GB/s
    9.0 left arrow 9.6
  • 写入速度，GB/s
    5.7 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2248

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM