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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
报告一个错误
更快的读取速度,GB/s
15
13.4
测试中的平均数值
更快的写入速度,GB/s
11.4
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
13.4
15.0
写入速度,GB/s
9.0
11.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2423
2628
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965600-027.A00G 16GB
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Samsung M474A1G43DB0-CPB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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V-Color Technology Inc. TN416G24D817-VHA/R 16GB
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V-GEN D4H4GS24A8 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
SK Hynix HYMP512S64CP8-Y5 1GB
Corsair CMD64GX4M4B3333C16 16GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
报告一个错误
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Bug description
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