Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3200C14-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异

  • 低于PassMark测试中的延时,ns
    26 left arrow 29
    左右 -12% 更低的延时
  • 更快的读取速度,GB/s
    19.1 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    15.9 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
G Skill Intl F4-3200C14-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    29 left arrow 26
  • 读取速度,GB/s
    13.4 left arrow 19.1
  • 写入速度,GB/s
    9.0 left arrow 15.9
  • 内存带宽,mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3876
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最新比较