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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
66
左右 56% 更低的延时
更快的写入速度,GB/s
9.0
7.9
测试中的平均数值
需要考虑的原因
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
报告一个错误
更快的读取速度,GB/s
15.9
13.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
66
读取速度,GB/s
13.4
15.9
写入速度,GB/s
9.0
7.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
1877
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
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Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM的比较
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TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
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报告一个错误
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Bug description
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