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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Micron Technology 4ATF51264HZ-2G6E3 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
31
左右 6% 更低的延时
需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E3 4GB
报告一个错误
更快的读取速度,GB/s
16.6
13.4
测试中的平均数值
更快的写入速度,GB/s
12.5
9.0
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
31
读取速度,GB/s
13.4
16.6
写入速度,GB/s
9.0
12.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2423
2605
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-134.A00LF 2GB
Corsair CMR32GX4M2C3000C15 16GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK32GX4M4B3866C18 8GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Gloway International (HK) STK4U2400D17161C 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CM4B8G2J2400A14K 8GB
Kingston 99U5403-036.A00G 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2400C15-16GIS 16GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA425S6AFR6N-UH 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3400C16-8GTZSW 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
A-DATA Technology DOVF1B163G2G 2GB
Kingston KHX3733C19D4/8GX 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
报告一个错误
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Bug description
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