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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Micron Technology 9ASF51272PZ-2G1B1 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
51
左右 43% 更低的延时
更快的读取速度,GB/s
13.4
9.6
测试中的平均数值
更快的写入速度,GB/s
9.0
7.8
测试中的平均数值
需要考虑的原因
Micron Technology 9ASF51272PZ-2G1B1 4GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
51
读取速度,GB/s
13.4
9.6
写入速度,GB/s
9.0
7.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2423
2248
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CMR16GX4M2E4266C19 8GB
Samsung M471B5273EB0-CK0 4GB
AMD R748G2400U2S 8GB
Samsung M378B1G73BH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 9ASF51272PZ-2G1B1 4GB
Kingston 9905403-447.A00LF 4GB
Kingston 9905744-027.A00G 16GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
报告一个错误
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Bug description
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