RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M471A1A43CB1-CRC 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Samsung M471A1A43CB1-CRC 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Samsung M471A1A43CB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
更快的读取速度,GB/s
13.4
11.2
测试中的平均数值
更快的写入速度,GB/s
9.0
5.4
测试中的平均数值
需要考虑的原因
Samsung M471A1A43CB1-CRC 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Samsung M471A1A43CB1-CRC 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
13.4
11.2
写入速度,GB/s
9.0
5.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
1774
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Samsung M471A1A43CB1-CRC 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Kingston 9905403-134.A00LF 2GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Corsair CML16GX3M2A1600C10 8GB
Corsair CMN32GX4M2Z3600C18 16GB
A-DATA Technology DDR2 800G 2GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KF2933C17S4/16G 16GB
Samsung M471A5244CB0-CWE 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965589-030.D01G 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3000C15-8GRKB 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston KHX2133C14/16G 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD32GX4M4B2133C10 8GB
Samsung M393B1K70CH0-CH9 8GB
Gloway International (HK) STK4U2400D17081C 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965662-013.A01G 16GB
Team Group Inc. UD5-6400 16GB
Ramsta Ramsta-2666MHz-4G 4GB
报告一个错误
×
Bug description
Source link