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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Corsair CMK64GX4M4C3000C15 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Corsair CMK64GX4M4C3000C15 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
总分
Corsair CMK64GX4M4C3000C15 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
39
左右 28% 更低的延时
需要考虑的原因
Corsair CMK64GX4M4C3000C15 16GB
报告一个错误
更快的读取速度,GB/s
14.7
10.9
测试中的平均数值
更快的写入速度,GB/s
14.6
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
8500
左右 2 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Corsair CMK64GX4M4C3000C15 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
39
读取速度,GB/s
10.9
14.7
写入速度,GB/s
7.1
14.6
内存带宽,mbps
8500
17000
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1668
3185
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMK64GX4M4C3000C15 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
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Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Corsair CMX4GX3M1A1333C9 4GB
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Kingston KHX1600C9D3/4GX 4GB
Corsair CMK16GX4M2C3000C15 8GB
Samsung M393B2G70BH0-CK0 16GB
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Samsung M378B5773DH0-CH9 2GB
Mushkin 99[2/7/4]192F 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Kingston 9965662-002.A01G 16GB
报告一个错误
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