Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SK Hynix HMT351S6AFR8C-G7 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs SK Hynix HMT351S6AFR8C-G7 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分
star star star star star
SK Hynix HMT351S6AFR8C-G7 4GB

SK Hynix HMT351S6AFR8C-G7 4GB

差异

  • 低于PassMark测试中的延时,ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的写入速度,GB/s
    7.1 left arrow 7.0
    测试中的平均数值
  • 更快的读取速度,GB/s
    12 left arrow 10.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
SK Hynix HMT351S6AFR8C-G7 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    28 left arrow 30
  • 读取速度,GB/s
    10.9 left arrow 12.0
  • 写入速度,GB/s
    7.1 left arrow 7.0
  • 内存带宽,mbps
    8500 left arrow 8500
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1066 MHz
  • 排名PassMark (越多越好)
    1668 left arrow 1948
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较