Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Crucial Technology BLS16G4D240FSB.16FAD 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分
star star star star star
Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

差异

  • 低于PassMark测试中的延时,ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的读取速度,GB/s
    17.4 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.9 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    28 left arrow 30
  • 读取速度,GB/s
    10.9 left arrow 17.4
  • 写入速度,GB/s
    7.1 left arrow 12.9
  • 内存带宽,mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1668 left arrow 3310
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较