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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
18.5
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
65
左右 -132% 更低的延时
更快的写入速度,GB/s
15.7
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
28
读取速度,GB/s
3,580.8
18.5
写入速度,GB/s
1,592.0
15.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3601
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL16-18-18 D4-2666
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Corsair CMX4GX3M2A1600C9 2GB
Heoriady M378A1K43BB2-CTD 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMT16GX4M2Z3200C16 8GB
Kingston KVR533D2N4 512MB
Kingston ACR26D4U9D8MH-16 16GB
Samsung M393B1G70BH0-YK0 8GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4X16GE2400C16K4 16GB
Samsung M378B5773DH0-CH9 2GB
Kingston K821PJ-MIB 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CM4X16GC3200C16K2 16GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-3200C16-4GRB 4GB
Kingston KVR533D2N4 512MB
Samsung M471A1K43CB1-CTD 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-4000C16-16GTRS 16GB
报告一个错误
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Bug description
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