RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
17.6
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
报告一个错误
低于PassMark测试中的延时,ns
30
65
左右 -117% 更低的延时
更快的写入速度,GB/s
13.9
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
30
读取速度,GB/s
3,580.8
17.6
写入速度,GB/s
1,592.0
13.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3473
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB RAM的比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK8GX4M2B4200C19 4GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMK8GX4M2B3600C18 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL16-20-20 D4-3200
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-8GSXFB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F5-6400J3239G16G 16GB
Avant Technology J644GU44J9266NF 32GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX21334D4/8G 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-3000C15-8GRK 8GB
Kingston 99U5469-045.A00LF 4GB
Super Talent F24EB8GS 8GB
Samsung M393B5270CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
报告一个错误
×
Bug description
Source link