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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
18.2
测试中的平均数值
需要考虑的原因
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
65
左右 -141% 更低的延时
更快的写入速度,GB/s
16.8
1,592.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
27
读取速度,GB/s
3,580.8
18.2
写入速度,GB/s
1,592.0
16.8
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
572
3731
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5474-010.A00LF 2GB
Kingston 9905630-033.A00G 16GB
Samsung M395T2863QZ4-CF76 1GB
Transcend Information TS2GSH64V6B 16GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M471A1A43CB1-CRC 8GB
A-DATA Technology VDQVE1B16 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Micron Technology 16JTF51264HZ-1G6M1 4GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.B1GN3.4032B 4GB
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SK Hynix GKE160SO102408-2400 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMA41GR7AFR8N-TF 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
PNY Electronics 4GBH2X02E99927-16 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
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